Datasheet Details
| Part number | ME2306DS |
|---|---|
| Manufacturer | Matsuki |
| File Size | 1.03 MB |
| Description | N-Channel 30V (D-S) MOSFET |
| Datasheet | ME2306DS-Matsuki.pdf |
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Overview: ME2306DS/ME2306DS-G N-Channel 30V (D-S) MOSFET , ESD Protected.
| Part number | ME2306DS |
|---|---|
| Manufacturer | Matsuki |
| File Size | 1.03 MB |
| Description | N-Channel 30V (D-S) MOSFET |
| Datasheet | ME2306DS-Matsuki.pdf |
|
|
|
The ME2306DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
ME2306 | N-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| ME2306DS-G | N-Channel 30V (D-S) MOSFET |
| ME2306D | N-Channel 30V (D-S) MOSFET |
| ME2306D-G | N-Channel 30V (D-S) MOSFET |
| ME2306 | N-Channel Enhancement Mode Mosfet |
| ME2306-G | N-Channel Enhancement Mode Mosfet |
| ME2306A | N-Channel 30V (D-S) MOSFET |
| ME2306A-G | N-Channel 30V (D-S) MOSFET |
| ME2306AS | N-Channel 30V (D-S) MOSFET |
| ME2306AS-G | N-Channel 30V (D-S) MOSFET |
| ME2306S | N-Channel 30V (D-S) MOSFET |