ME2307 mosfet equivalent, p-channel 30v (d-s) mosfet.
* RDS(ON) ≦70mΩ@VGS=-10V
* RDS(ON) ≦95mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
APPLICATIONS
* Power Management in Note book.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC
O.
The ME2307 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
Image gallery
Download