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ME2307C - P-Channel 30V (D-S) MOSFET

Description

The ME2307C is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON) ≦70mΩ@VGS=-10V.
  • RDS(ON) ≦95mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).

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Datasheet Details

Part number ME2307C
Manufacturer Matsuki
File Size 897.78 KB
Description P-Channel 30V (D-S) MOSFET
Datasheet download datasheet ME2307C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel 30V (D-S) MOSFET ME2307C/ME2307C-G GENERAL DESCRIPTION The ME2307C is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON) ≦70mΩ@VGS=-10V ● RDS(ON) ≦95mΩ@VGS=-4.
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