ME2308D mosfet equivalent, n-channel 30v (d-s) mosfet.
* RDS(ON)≦60mΩ@VGS=10V
* RDS(ON)≦70mΩ@VGS=4.5V
* RDS(ON)≦100mΩ@VGS=2.5V
* ESD Protection
* Super high density cell design for extremely low RDS(ON)
* Power Management in Note book
* Portable Equipment
* Load Switch
* DSC
* The Ordering Information: ME.
The ME2308D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
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