Datasheet Details
| Part number | ME2308D-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 784.81 KB |
| Description | N-Channel 30V (D-S) MOSFET |
| Datasheet | ME2308D-G ME2308D Datasheet (PDF) |
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Overview: ME2308D/ME2308D-G N-Channel 30V (D-S) MOSFET ,ESD Protection.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | ME2308D-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 784.81 KB |
| Description | N-Channel 30V (D-S) MOSFET |
| Datasheet | ME2308D-G ME2308D Datasheet (PDF) |
|
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|
The ME2308D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package.
| Part Number | Description |
|---|---|
| ME2308D | N-Channel 30V (D-S) MOSFET |
| ME2308S | N-Channel 60V (D-S) MOSFET |
| ME2308S-G | N-Channel 60V (D-S) MOSFET |
| ME2301 | P-Channel Enhancement Mode Mosfet |
| ME2301-G | P-Channel Enhancement Mode Mosfet |
| ME2301A | P-Channel 20V (D-S) MOSFET |
| ME2301A-G | P-Channel 20V (D-S) MOSFET |
| ME2301DC | P-Channel 20V (D-S) MOSFET |
| ME2301DC-G | P-Channel 20V (D-S) MOSFET |
| ME2301GC | P-Channel 20V (D-S) MOSFET |