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ME2308D - N-Channel 30V (D-S) MOSFET

Description

The ME2308D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦60mΩ@VGS=10V.
  • RDS(ON)≦70mΩ@VGS=4.5V.
  • RDS(ON)≦100mΩ@VGS=2.5V.
  • ESD Protection.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME2308D
Manufacturer Matsuki
File Size 784.81 KB
Description N-Channel 30V (D-S) MOSFET
Datasheet download datasheet ME2308D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ME2308D/ME2308D-G N-Channel 30V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION The ME2308D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON)≦60mΩ@VGS=10V ● RDS(ON)≦70mΩ@VGS=4.5V ● RDS(ON)≦100mΩ@VGS=2.
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