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ME2308D Datasheet N-channel 30v (d-s) MOSFET

Manufacturer: Matsuki

Overview: ME2308D/ME2308D-G N-Channel 30V (D-S) MOSFET ,ESD Protection.

Datasheet Details

Part number ME2308D
Manufacturer Matsuki
File Size 784.81 KB
Description N-Channel 30V (D-S) MOSFET
Datasheet ME2308D-Matsuki.pdf

General Description

The ME2308D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON)≦60mΩ@VGS=10V.
  • RDS(ON)≦70mΩ@VGS=4.5V.
  • RDS(ON)≦100mΩ@VGS=2.5V.
  • ESD Protection.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

More Datasheets from Matsuki

Part Number Description
ME2308D-G N-Channel 30V (D-S) MOSFET
ME2308S N-Channel 60V (D-S) MOSFET
ME2308S-G N-Channel 60V (D-S) MOSFET
ME2301 P-Channel Enhancement Mode Mosfet
ME2301-G P-Channel Enhancement Mode Mosfet
ME2301A P-Channel 20V (D-S) MOSFET
ME2301A-G P-Channel 20V (D-S) MOSFET
ME2301DC P-Channel 20V (D-S) MOSFET
ME2301DC-G P-Channel 20V (D-S) MOSFET
ME2301GC P-Channel 20V (D-S) MOSFET

ME2308D Distributor