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ME2308S-G - N-Channel 60V (D-S) MOSFET

Download the ME2308S-G datasheet PDF. This datasheet also covers the ME2308S variant, as both devices belong to the same n-channel 60v (d-s) mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The ME2308S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON) ≦100mΩ@VGS=10V.
  • RDS(ON) ≦130mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME2308S-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME2308S-G
Manufacturer Matsuki
File Size 1.00 MB
Description N-Channel 60V (D-S) MOSFET
Datasheet download datasheet ME2308S-G Datasheet

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Other Datasheets by Matsuki

Part Number Description
ME2308S N-Channel 60V (D-S) MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel 60V (D-S) MOSFET ME2308S/ME2308S-G GENERAL DESCRIPTION The ME2308S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON) ≦100mΩ@VGS=10V ● RDS(ON) ≦130mΩ@VGS=4.
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