Datasheet4U Logo Datasheet4U.com

ME2308S Datasheet N-channel 60v (d-s) MOSFET

Manufacturer: Matsuki

Overview: N-Channel 60V (D-S) MOSFET ME2308S/ME2308S-G GENERAL.

Datasheet Details

Part number ME2308S
Manufacturer Matsuki
File Size 1.00 MB
Description N-Channel 60V (D-S) MOSFET
Datasheet ME2308S-Matsuki.pdf

General Description

The ME2308S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON) ≦100mΩ@VGS=10V.
  • RDS(ON) ≦130mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

More Datasheets from Matsuki

Part Number Description
ME2308S-G N-Channel 60V (D-S) MOSFET
ME2308D N-Channel 30V (D-S) MOSFET
ME2308D-G N-Channel 30V (D-S) MOSFET
ME2301 P-Channel Enhancement Mode Mosfet
ME2301-G P-Channel Enhancement Mode Mosfet
ME2301A P-Channel 20V (D-S) MOSFET
ME2301A-G P-Channel 20V (D-S) MOSFET
ME2301DC P-Channel 20V (D-S) MOSFET
ME2301DC-G P-Channel 20V (D-S) MOSFET
ME2301GC P-Channel 20V (D-S) MOSFET

ME2308S Distributor