ME2317D-G Datasheet, Matsuki

* RDS(ON) ≦45mΩ@VGS=-10V
* RDS(ON) ≦53mΩ@VGS=-4.5V
* RDS(ON) ≦80mΩ@VGS=-2.5V
* Typical ESD performance 3KV
* Super high density cell design for extrem.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC T.

The ME2317D-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are pa.