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ME2345-G, ME2345 - P-Channel Enhancement Mode Mosfet

Matsuki

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ME2345-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2345-G, ME2345. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	ME2345-G, ME2345
Manufacturer	Matsuki
File Size	0.99 MB
Description	P-Channel Enhancement Mode Mosfet
Datasheet	ME2345-Matsuki.pdf
Note	This datasheet PDF includes multiple part numbers: ME2345-G, ME2345. Please refer to the document for exact specifications by model.

ME2345-G Product details

Description

The ME2345 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

Features

RDS(ON) ≦65mΩ@VGS=-10V.
RDS(ON) ≦75mΩ@VGS=-4.5V.
RDS(ON) ≦105mΩ@VGS=-2.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: May 17, 2016 |