ME2508 - N-Channel MOSFET

Matsuki

General Description

The ME2508 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Key Features

RDS(ON)≦74mΩ@VGS=10V.
RDS(ON)≦92mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

ME2508 n-channel mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	ME2508
Manufacturer	Matsuki
File Size	0.96 MB
Description	N-Channel MOSFET
Datasheet	ME2508 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
ME2-CH2O-16x15	Electrochemical Formaldehyde Sensor	Winsen
ME2-CH2O-D16	Electrochemical Formaldehyde Sensor	Winsen
ME2-CO-D14-C	Electrochemical Carbon Monoxide sensor	Winsen
ME2-O2-D20	Electrochemical Oxygen Sensor	Winsen
ME20P03	P-Channel MOSFET	VBsemi

Other Datasheets by Matsuki

Part Number	Description
ME2508-G	N-Channel MOSFET
ME2514	N-Channel MOSFET
ME2514-G	N-Channel MOSFET
ME25N06	N-Channel Enhancement MOSFET
ME25N06-G	N-Channel Enhancement MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME2508 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-89) Top View ME2508/ME2508-G FEATURES ● RDS(ON)≦74mΩ@VGS=10V ● RDS(ON)≦92mΩ@VGS=4.