ME25N10F Description
The ME25N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
ME25N10F Key Features
- RDS(ON)≦85mΩ@VGS=10V
- RDS(ON)≦105mΩ@VGS=5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME25N10F Applications
- Power Management in Note book