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ME25N10F-G - N-Channel MOSFET

This page provides the datasheet information for the ME25N10F-G, a member of the ME25N10F N-Channel MOSFET family.

Product Overview

Matsuki

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ME25N10F-G N-Channel MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME25N10F-G

Datasheet Details

Part number	ME25N10F-G
Manufacturer	Matsuki
File Size	928.47 KB
Description	N-Channel MOSFET
Datasheet	ME25N10F-G Datasheet
Additional preview pages of the ME25N10F-G datasheet.

ME25N10F-G Product details

Description

The ME25N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON)≦85mΩ@VGS=10V.
RDS(ON)≦105mΩ@VGS=5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 21, 2018 |