ME25N10F-G - N-Channel MOSFET

Matsuki

Download the ME25N10F-G datasheet PDF. This datasheet also covers the ME25N10F variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME25N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦85mΩ@VGS=10V.
RDS(ON)≦105mΩ@VGS=5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

ME25N10F-G n-channel mosfet by Matsuki - Datasheet Preview — Note: The manufacturer provides a single datasheet file (ME25N10F-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	ME25N10F-G
Manufacturer	Matsuki
File Size	928.47 KB
Description	N-Channel MOSFET
Datasheet	ME25N10F-G Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
ME2-CH2O-16x15	Electrochemical Formaldehyde Sensor	Winsen
ME2-CH2O-D16	Electrochemical Formaldehyde Sensor	Winsen
ME2-CO-D14-C	Electrochemical Carbon Monoxide sensor	Winsen
ME2-O2-D20	Electrochemical Oxygen Sensor	Winsen
ME20P03	P-Channel MOSFET	VBsemi

Other Datasheets by Matsuki

Part Number	Description
ME25N10F	N-Channel MOSFET
ME25N10T	N-Channel MOSFET
ME25N10T-G	N-Channel MOSFET
ME25N15	N-Channel MOSFET
ME25N15-G	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

ME25N10F/ME25N10F-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME25N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.