Datasheet4U Logo Datasheet4U.com

ME25N10T-G - N-Channel MOSFET

Download the ME25N10T-G datasheet PDF. This datasheet also covers the ME25N10T variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME25N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦85mΩ@VGS=10V.
  • RDS(ON)≦105mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME25N10T-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME25N10T-G
Manufacturer Matsuki
File Size 0.96 MB
Description N-Channel MOSFET
Datasheet download datasheet ME25N10T-G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ME2-CH2O-16x15 Electrochemical Formaldehyde Sensor Winsen
ME2-CH2O-D16 Electrochemical Formaldehyde Sensor Winsen
ME2-CO-D14-C Electrochemical Carbon Monoxide sensor Winsen
ME2-O2-D20 Electrochemical Oxygen Sensor Winsen
ME20P03 P-Channel MOSFET VBsemi

Other Datasheets by Matsuki

Part Number Description
ME25N10T N-Channel MOSFET
ME25N10F N-Channel MOSFET
ME25N10F-G N-Channel MOSFET
ME25N15 N-Channel MOSFET
ME25N15-G N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ME25N10T/ME25N10T-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME25N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION FEATURES ● RDS(ON)≦85mΩ@VGS=10V ● RDS(ON)≦105mΩ@VGS=4.