ME25N10T-G
DESCRIPTION
The ME25N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
FEATURES
- RDS(ON)≦85mΩ@VGS=10V
- RDS(ON)≦105mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- DC/DC Converter
- Load Switch
- LCD Display inverter
(TO-220) Top View
- The Ordering Information: ME25N10T (Pb-free) ME25N10T-G (Green product-Halogen free )
Absolute Maximum...
