ME25N10F - N-Channel MOSFET

Matsuki

General Description

The ME25N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦85mΩ@VGS=10V.
RDS(ON)≦105mΩ@VGS=5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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ME25N10F n-channel mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	ME25N10F
Manufacturer	Matsuki
File Size	928.47 KB
Description	N-Channel MOSFET
Datasheet	ME25N10F Datasheet

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Other Datasheets by Matsuki

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ME25N10F-G	N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ME25N10F/ME25N10F-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME25N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.