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ME2N7002F-G Datasheet N-channel MOSFET

Manufacturer: Matsuki

Overview: ME2N7002F/ME2N7002F -G N-Channel 60V (D-S) MOSFET, ESD Protection.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ME2N7002F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

PIN CONFIGURATION

Key Features

  • RDS(ON)≦8Ω@VGS=4V.
  • RDS(ON)≦13Ω@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

ME2N7002F-G Distributor