ME3491D-G Datasheet, Matsuki

* RDS(ON)≦50mΩ@VGS=-4.5V
* RDS(ON)≦65mΩ@VGS=-2.5V
* RDS(ON)≦82mΩ@VGS=-1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC O.

The ME3491D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.