ME3491D-G, ME3491D Datasheet - Matsuki

ME3491D-G P-Channel 20V (D-S) MOSFET

The ME3491D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME3491D-G Features

* RDS(ON)≦50mΩ@VGS=-4.5V

* RDS(ON)≦65mΩ@VGS=-2.5V

* RDS(ON)≦82mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Batt

ME3491D-Matsuki.pdf (1.06 MB)

ME3491D-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME3491D-G, ME3491D. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME3491D-G, ME3491D

Manufacturer:

Matsuki

File Size:

1.06 MB

Description:

P-channel 20v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME3491D-G, ME3491D.
Please refer to the document for exact specifications by model.

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ME3491D-G ME3491D P-Channel 20V D-S MOSFET Matsuki

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