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ME3491D-G Datasheet P-channel 20v (d-s) MOSFET

Manufacturer: Matsuki

Overview: ME3491D/ME3491D-G P-Channel 20V (D-S) MOSFET，ESD Protected GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ME3491D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON)≦50mΩ@VGS=-4.5V.
  • RDS(ON)≦65mΩ@VGS=-2.5V.
  • RDS(ON)≦82mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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ME3491D-G Distributor