ME3985DS-G, ME3985DS Datasheet - Matsuki

ME3985DS-G Dual P-Channel 20V (D-S) MOSFET

The ME3985DS is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application .

ME3985DS-G Features

* RDS(ON)≦120mΩ@VGS=-4.5V

* RDS(ON)≦160mΩ@VGS=-2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* DC

ME3985DS-Matsuki.pdf

ME3985DS-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME3985DS-G, ME3985DS. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME3985DS-G, ME3985DS

Manufacturer:

Matsuki

File Size:

670.59 KB

Description:

Dual p-channel 20v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME3985DS-G, ME3985DS.
Please refer to the document for exact specifications by model.

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ME3985DS-G ME3985DS Dual P-Channel 20V D-S MOSFET Matsuki

ME3985DS-G Distributor