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ME4542D-G Datasheet Preview

ME4542D-G Datasheet

N- & P-Channel MOSFET

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N- and P-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4542D is the N- and P-Channel logic enhancement mode
power field effect transistors are produced using high cell density ,
DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery
powered circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4542D/ME4542D-G
FEATURES
RDS(ON)
m@VGS=10V (N-Ch)
RDS(ON) m@VGS=4.5V (N-Ch)
RDS(ON) m@VGS=-10V (P-Ch)
RDS(ON) m@VGS=-4.5V (P-Ch)
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management
DC/DC Converter
LCD TV & Monitor Display inverter
CCFL inverter
LCD Display inverter
e Ordering Information: ME4542D (Pb-free)
ME4542D-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25 Unless Otherwise Noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(Tj=150 )
TA=25
TA=70
Pulsed Drain Current
Avalanche Energy with Single Pulse(L=0.1mH)
Maximum Power Dissipation
Operating Junction Temperature
TA=25
TA=70
VDSS
VGSS
ID
IDM
Eas
PD
TJ
Thermal Resistance-Junction to Ambient *
RθJA
*The device mounted on 1in2 FR4 board with 2 oz copper
May, 2009-Ver1.0
N-Channel
Steady State
30
±20
6.8
5.4
30
P-Channel
Steady State
-30
±16
6.2
4.9
-30
Unit
V
A
4.4 20
2
1.28
-55 to 150
2
1.28
W
62.5 62.5 D C C
正式發行
01




Matsuki

ME4542D-G Datasheet Preview

ME4542D-G Datasheet

N- & P-Channel MOSFET

No Preview Available !

ME4542D/ME4542D-G
N- and P-Channel 30-V (D-S) MOSFET
Electrical Characteristics (TA =25 Unless Otherwise Specified)
Symbol Parameter
STATIC
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
Conditions
VGS=0V, ID=250 A
VGS=0V, ID=-250 A
VDS=VGS, ID=250 A
VDS=VGS, ID=-250 A
IGSS Gate Leakage Current
VDS=0V, VGS=±16V
VDS=0V, VGS=±12V
IDSS Zero Gate Voltage Drain Current
RDS(ON) Drain-Source On-State Resistancea
VSD Diode Forward Voltage
DYNAMIC
VDS=30V, VGS=0V
VDS=-30V, VGS=0V
VGS=10V, ID= 6.7A
VGS=-10V, ID= -6.1A
VGS=4.5V, ID= 5.0A
VGS=-4.5V, ID= -5.0A
IS=1.7A, VGS=0V
IS=-1.7A, VGS=0V
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
N-Channel
VDS=15V, VGS=10V, ID=6.7A
P-Channel
VDS=-15V, VGS=-10V, ID=-6.1A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Channel
VDS=15V, VGS=0V, f=1MHz
P-Channel
VDS=15V, VGS=0V, f=1MHz
Rg
td(on)
tr
td(off)
tf
Gate Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS=0V, VGS=0V, f=1MHz
N-Channel
VDD=15V, RL =15
ID=1A, VGEN=10V, RG=6
P-Channel
VDD=-15V, RL =15
ID=-1A, VGEN=-10V,RG=6
Min Typ
N-Ch
P-Ch
N-Ch
P-Ch
30
-30
1.0
-1.0
1.6
-1.5
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
21
25
33
32
0.78
0.77
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
11
23
3
4
2
3.7
360
880
67
130
20
40
2.2
4.2
10
38
13
19
31
58
4
9
Max Unit
3.0
-3.0
±10
±10
1
-1
25.5
33
40
43
1.2
V
V
A
A
m
V
nC
pF
ns
Notes: a. Pulse test: pulse width 300us, duty cycle 2%, Guaranteed by design, not subject to production testing.
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
May, 2009-Ver1.0
02


Part Number ME4542D-G
Description N- & P-Channel MOSFET
Maker Matsuki
Total Page 7 Pages
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