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ME4565A - N- & P-Channel MOSFET

General Description

The ME4565A is the N and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON) 26.5mΩ@VGS=10V (N-Ch) RDS(ON) 45mΩ@VGS=4.5V (N-Ch) RDS(ON) 44mΩ@VGS=-10V (P-Ch) RDS(ON) 60mΩ@VGS=-4.5V(P-Ch) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME4565A
Manufacturer Matsuki
File Size 1.03 MB
Description N- & P-Channel MOSFET
Datasheet download datasheet ME4565A Datasheet

Full PDF Text Transcription for ME4565A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for ME4565A. For precise diagrams, and layout, please refer to the original PDF.

N- and P-Channel 40-V (D-S) MOSFET ME4565A/ ME4565A-G GENERAL DESCRIPTION The ME4565A is the N and P-Channel logic enhancement mode power field effect transistors are pro...

View more extracted text
-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View FEATURES RDS(ON) 26.5mΩ@VGS=10V (N-Ch) RDS(ON) 45mΩ@VGS=4.5V (N-Ch) RDS(ON) 44mΩ@VGS=-10V (P-Ch) RDS(ON) 60mΩ@VG

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