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ME4565 - N- and P-Channel 40-VPowerMOSFET

Download the ME4565 datasheet PDF. This datasheet also covers the ME4565-LITE variant, as both devices belong to the same n- and p-channel 40-vpowermosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The LT4565 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦40mΩ@VGS=10V (N-Ch).
  • RDS(ON)≦45mΩ@VGS=4.5V (N-Ch).
  • RDS(ON)≦54mΩ@VGS=-10V (P-Ch).
  • RDS(ON)≦60mΩ@VGS=-4.5V(P-Ch).
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME4565-LITE-ON.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME4565
Manufacturer LITEON
File Size 1.83 MB
Description N- and P-Channel 40-VPowerMOSFET
Datasheet download datasheet ME4565 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N- and P-Channel 40-V Power MOSFET GENERAL DESCRIPTION The LT4565 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. ME4565 FEATURES ● RDS(ON)≦40mΩ@VGS=10V (N-Ch) ● RDS(ON)≦45mΩ@VGS=4.5V (N-Ch) ● RDS(ON)≦54mΩ@VGS=-10V (P-Ch) ● RDS(ON)≦60mΩ@VGS=-4.