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ME4565A-G - N- & P-Channel MOSFET

This page provides the datasheet information for the ME4565A-G, a member of the ME4565A N- & P-Channel MOSFET family.

Datasheet Summary

Description

The ME4565A is the N and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON) 26.5mΩ@VGS=10V (N-Ch) RDS(ON) 45mΩ@VGS=4.5V (N-Ch) RDS(ON) 44mΩ@VGS=-10V (P-Ch) RDS(ON) 60mΩ@VGS=-4.5V(P-Ch) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME4565A-G

Datasheet Details

Part number ME4565A-G
Manufacturer Matsuki
File Size 1.03 MB
Description N- & P-Channel MOSFET
Datasheet download datasheet ME4565A-G Datasheet
Additional preview pages of the ME4565A-G datasheet.

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Full PDF Text Transcription

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N- and P-Channel 40-V (D-S) MOSFET ME4565A/ ME4565A-G GENERAL DESCRIPTION The ME4565A is the N and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View FEATURES RDS(ON) 26.5mΩ@VGS=10V (N-Ch) RDS(ON) 45mΩ@VGS=4.5V (N-Ch) RDS(ON) 44mΩ@VGS=-10V (P-Ch) RDS(ON) 60mΩ@VGS=-4.
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