ME4565AD4/ME4565AD4-G
N- and P-Channel 40-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4565AD4 is the N and P-Channel logic enhancement mode
power field effect transistors are produced using high cell density ,
DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery
powered circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(TO-252-4L)
Top View
FEATURES
RDS(ON) 30mΩ@VGS=10V (N-Ch)
RDS(ON) 58mΩ@VGS=4.5V (N-Ch)
RDS(ON) 45mΩ@VGS=-10V (P-Ch)
RDS(ON) 75mΩ@VGS=-4.5V(P-Ch)
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
LCD Display inverter
e Ordering Information: ME4565AD4 (Pb-free)
ME4565AD4-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25 Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(Tj=150 )*
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TC=25
TC=70
TA=25
TA=70
TA=25
TA=70
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
RθJC
N-Channel P-Channel
Unit
40 -40 V
±25 ±25 V
22.1
-18.6
17.7
-14.9
A
7.4 -6.1
5.9 -5
30 -30 A
2.6
1.67
2.7
W
1.7
-55 to 150
Steady 48
10sec 20
5.3
Steady
10sec
5
46
18 D C C
正式發行
*The device mounted on 1in2 FR4 board with 2 oz copper
Sep, 2008-Ver1.1
01
