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ME4565AD4-G, ME4565AD4 Datasheet - Matsuki

ME4565AD4-G N- & P-Channel MOSFET

The ME4565AD4 is the N and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applicatio.

ME4565AD4-G Features

* RDS(ON) 30mΩ@VGS=10V (N-Ch) RDS(ON) 58mΩ@VGS=4.5V (N-Ch) RDS(ON) 45mΩ@VGS=-10V (P-Ch) RDS(ON) 75mΩ@VGS=-4.5V(P-Ch) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Power Management in Note book Portable Equipment Batter

ME4565AD4-Matsuki.pdf

This datasheet PDF includes multiple part numbers: ME4565AD4-G, ME4565AD4. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

ME4565AD4-G, ME4565AD4

Manufacturer:

Matsuki

File Size:

1.47 MB

Description:

N- & p-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME4565AD4-G, ME4565AD4.
Please refer to the document for exact specifications by model.

ME4565AD4-G Distributor

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ME4565AD4-G ME4565AD4 P-Channel MOSFET Matsuki