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ME4626-G, ME4626 - N-Channel MOSFET

Matsuki

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ME4626-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME4626-G, ME4626. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	ME4626-G, ME4626
Manufacturer	Matsuki
File Size	809.53 KB
Description	N-Channel MOSFET
Datasheet	ME4626-Matsuki.pdf
Note	This datasheet PDF includes multiple part numbers: ME4626-G, ME4626. Please refer to the document for exact specifications by model.

ME4626-G Product details

Description

The ME4626 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

Features

RDS(ON)≦3.5mΩ@VGS=10V.
RDS(ON)≦4.5mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Dec 12, 2015 |