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ME4626-G Datasheet Preview

ME4626-G Datasheet

N-Channel 30-V(D-S) MOSFET

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ME4626/ME4626-G
N-Channel 30-V(D-S) MOSFET
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
GENERAL DESCRIPTION
The ME4626 is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
FEATURES
RDS(ON)3.5m@VGS=10V
RDS(ON)4.5m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Battery Powered System
DC/DC Converter
Load Switch
e Ordering Information: ME4626 (Pb-free)
ME4626-G (Green product-Halogen free)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current( TJ =150)*
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Lead*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
RθJL
* The device mounted on 1in2 FR4 board with 2 oz copper
Aug, 2009-Ver2.0
Limit
30
±20
21
16.9
84
2.5
1.6
-55 to 150
50
24
Unit
V
V
A
A
W
℃/W
01




Matsuki

ME4626-G Datasheet Preview

ME4626-G Datasheet

N-Channel 30-V(D-S) MOSFET

No Preview Available !

N-Channel 30-V(D-S) MOSFET
ME4626/ME4626-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol
STATIC
BVDSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistance a
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge(4.5V)
Qg Total Gate Charge(10V)
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
td(on)
tr
td(off)
tf
Gate-Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Limit
Min Typ Max Unit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VGS=10V, ID= 15A
VGS=4.5V, ID= 10A
IS=15A, VGS=0V
30 V
1 3V
±100
1
nA
μA
2.8 3.5
mΩ
3.3 4.5
0.8 V
VDS=15V, VGS=4.5V, ID=15A
VDS=15V, VGS=10V, ID=15A
VDS=15V, VGS=0V, f=1.0MHz
VDS=0V, VGS=0V, f=1MHz
VDD=15V, RL =15Ω
ID=1A, VGEN=10V
RG=6Ω
62
128
18
27
5730
660
220
0.9
33
20
110
17
nC
pF
Ω
ns
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
Aug, 2009-Ver2.0
02


Part Number ME4626-G
Description N-Channel 30-V(D-S) MOSFET
Maker Matsuki
Total Page 5 Pages
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