ME4626
ME4626 is N-Channel MOSFET manufactured by Matsuki.
DESCRIPTION
The ME4626 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8) Top View
FEATURES
- RDS(ON)≦3.5mΩ@VGS=10V
- RDS(ON)≦4.5mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- Battery Powered System
- DC/DC Converter
- Load Switch e Ordering Information: ME4626 (Pb-free)
ME4626-G (Green product-Halogen free)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current( TJ =150℃)-
TA=25℃ TA=70℃
Pulsed Drain Current
Maximum Power Dissipation-
TA=25℃ TA=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Ambient-
Thermal Resistance-Junction to Lead-
Symbol VDSS VGSS
TJ RθJA RθJL
- The device mounted on 1in2 FR4 board with 2 oz copper
Aug, 2009-Ver2.0
Limit 30 ±20 21 16.9 84 2.5 1.6
-55 to 150 50
Unit V V A A W...
