Download the ME4626-G datasheet PDF.
This datasheet also covers the ME4626 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
The ME4626 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Key Features
RDS(ON)≦3.5mΩ@VGS=10V.
RDS(ON)≦4.5mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
Full PDF Text Transcription for ME4626-G (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
ME4626-G. For precise diagrams, and layout, please refer to the original PDF.
ME4626/ME4626-G N-Channel 30-V(D-S) MOSFET Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) GENERAL DESCRIPTION The ME4626 is the N-Channel logic enhancement mode...
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GENERAL DESCRIPTION The ME4626 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View FEATURES ● RDS(ON)≦3.5mΩ@VGS=10V ● RDS(ON)≦4.5mΩ@VGS=4.
ME4626-G Datasheet
