ME40P03T-G - P-Channel MOSFET

Matsuki

Download the ME40P03T-G datasheet PDF. This datasheet also covers the ME40P03T variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME40P03T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦11mΩ@VGS=-10V.
RDS(ON)≦16mΩ@VGS=-4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

ME40P03T-G p-channel mosfet by Matsuki - Datasheet Preview — Note: The manufacturer provides a single datasheet file (ME40P03T-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	ME40P03T-G
Manufacturer	Matsuki
File Size	701.42 KB
Description	P-Channel MOSFET
Datasheet	ME40P03T-G Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
ME401C	DC-DC Converter	Microne
ME4052	High-voltage dual-cell linear charger	ChipSourceTek
ME4054	Standalone Linear Li-Ion Battery Charger	Microne
ME4054B-N	500mA Lithium Ion Battery Linear Charger	ChipSourceTek
ME4054B-N	500mA Lithium Ion Battery Linear Charger	Microne

Other Datasheets by Matsuki

Part Number	Description
ME40P03T	P-Channel MOSFET
ME4174	N-Channel 30V (D-S) MOSFET
ME4174-G	N-Channel 30V (D-S) MOSFET
ME4410	N-Channel 30-V (D-S) MOSFET
ME4410A	N-Channel 30-V (D-S) MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

P-Channel 30V (D-S) MOSFET ME40P03T/ME40P03T-G GENERAL DESCRIPTION The ME40P03T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦11mΩ@VGS=-10V ● RDS(ON)≦16mΩ@VGS=-4.