ME40P03T-G Overview
The ME40P03T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
ME40P03T-G Key Features
- RDS(ON)≦11mΩ@VGS=-10V
- RDS(ON)≦16mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME40P03T-G Applications
- Power Management in Note book