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ME40P03T-G - P-Channel MOSFET

This page provides the datasheet information for the ME40P03T-G, a member of the ME40P03T P-Channel MOSFET family.

Datasheet Summary

Description

The ME40P03T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦11mΩ@VGS=-10V.
  • RDS(ON)≦16mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME40P03T-G

Datasheet Details

Part number ME40P03T-G
Manufacturer Matsuki
File Size 701.42 KB
Description P-Channel MOSFET
Datasheet download datasheet ME40P03T-G Datasheet
Additional preview pages of the ME40P03T-G datasheet.

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Full PDF Text Transcription

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P-Channel 30V (D-S) MOSFET ME40P03T/ME40P03T-G GENERAL DESCRIPTION The ME40P03T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦11mΩ@VGS=-10V ● RDS(ON)≦16mΩ@VGS=-4.
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