ME4410A Datasheet PDF - Matsuki N-Channel 30-V (D-S) MOSFET Specs

ME4410A - N-Channel 30-V (D-S) MOSFET

Datasheet Summary

Description

The ME4410A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON)≦18mΩ@VGS=10V.
RDS(ON)≦20mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

Datasheet Details

Part number	ME4410A
Manufacturer	Matsuki
File Size	686.73 KB
Description	N-Channel 30-V (D-S) MOSFET
Datasheet	ME4410A Datasheet
Additional preview pages of the ME4410A datasheet.

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Full PDF Text Transcription

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ME4410A N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4410A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦18mΩ@VGS=10V ● RDS(ON)≦20mΩ@VGS=4.

Published: Jan 22, 2014 |