ME4410B-G
Overview
The ME4410B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
- RDS(ON) ≦ 18 mΩ@VGS=10V
- RDS(ON) ≦ 30 mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
