ME4410B Datasheet | Matsuki

N-Channel 30-V (D-S) MOSFET ME4410B/ME4410B-G GENERAL DESCRIPTION The ME4410B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View Features - RDS(ON) ≦ 18 mΩ@VGS=10V - RDS(ON) ≦ 30 mΩ@VGS=4.5V - Super high density cell...