Datasheet4U Logo Datasheet4U.com

ME4410B - N-Channel 30-V (D-S) MOSFET

This page provides the datasheet information for the ME4410B, a member of the ME4410B-G N-Channel 30-V (D-S) MOSFET family.

Datasheet Summary

Description

The ME4410B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON) ≦ 18 mΩ@VGS=10V.
  • RDS(ON) ≦ 30 mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Datasheet preview – ME4410B

Datasheet Details

Part number ME4410B
Manufacturer Matsuki
File Size 1.03 MB
Description N-Channel 30-V (D-S) MOSFET
Datasheet download datasheet ME4410B Datasheet
Additional preview pages of the ME4410B datasheet.

📁 Similar Datasheet

  • ME4425 - P-Channel 30-V (D-S) MOSFET (Matsuki Electric)
  • ME4425-G - P-Channel 30-V (D-S) MOSFET (Matsuki Electric)
  • ME4435 - P-Channel MOSFET (VBsemi)
  • ME4-H2 - Hydrogen Gas Sensor (Winsen)
  • ME4-NH3 - Ammonia Gas Sensor (Winsen)
  • ME4-SO2 - Electrochemical Sulfur Dioxide Sensor (Winsen)
  • ME401C - DC-DC Converter (Microne)
  • ME4052 - High-voltage dual-cell linear charger (ChipSourceTek)
  • ME4054 - Standalone Linear Li-Ion Battery Charger (Microne)
  • ME4054B-N - 500mA Lithium Ion Battery Linear Charger (ChipSourceTek)
Other Datasheets by Matsuki
  • ME4410B-G - N-Channel 30-V (D-S) MOSFET
  • ME4410 - N-Channel 30-V (D-S) MOSFET
  • ME4410A - N-Channel 30-V (D-S) MOSFET
  • ME4411 - P-Channel MOSFET
  • ME4411-G - P-Channel MOSFET
  • ME4412 - N-Channel 30-V (D-S) MOSFET
  • ME4412-G - N-Channel 30-V (D-S) MOSFET
  • ME4435 - P-Channel 30-V (D-S) MOSFET

Full PDF Text Transcription

Click to expand full text
N-Channel 30-V (D-S) MOSFET ME4410B/ME4410B-G GENERAL DESCRIPTION The ME4410B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View FEATURES ● RDS(ON) ≦ 18 mΩ@VGS=10V ● RDS(ON) ≦ 30 mΩ@VGS=4.
Published: |