ME4412 Datasheet PDF - Matsuki N-Channel 30-V (D-S) MOSFET Specs

ME4412 - N-Channel 30-V (D-S) MOSFET

Datasheet Summary

Description

The ME4412 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON) 18 mΩ@VGS=10V RDS(ON) 30 mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability.

Datasheet Details

Part number	ME4412
Manufacturer	Matsuki
File Size	741.20 KB
Description	N-Channel 30-V (D-S) MOSFET
Datasheet	ME4412 Datasheet
Additional preview pages of the ME4412 datasheet.

📁 Similar Datasheet

ME4425 - P-Channel 30-V (D-S) MOSFET (Matsuki Electric)

ME4425-G - P-Channel 30-V (D-S) MOSFET (Matsuki Electric)

ME4435 - P-Channel MOSFET (VBsemi)

ME4-H2 - Hydrogen Gas Sensor (Winsen)

ME4-NH3 - Ammonia Gas Sensor (Winsen)

ME4-SO2 - Electrochemical Sulfur Dioxide Sensor (Winsen)

ME401C - DC-DC Converter (Microne)

ME4052 - High-voltage dual-cell linear charger (ChipSourceTek)

ME4054 - Standalone Linear Li-Ion Battery Charger (Microne)

ME4054B-N - 500mA Lithium Ion Battery Linear Charger (ChipSourceTek)

Full PDF Text Transcription

Click to expand full text

N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4412 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4412/ME4412-G FEATURES RDS(ON) 18 mΩ@VGS=10V RDS(ON) 30 mΩ@VGS=4.

Published: Dec 14, 2018 |