ME4411 Datasheet PDF - Matsuki P-Channel MOSFET Specs

ME4411 - P-Channel MOSFET

Datasheet Summary

Description

The ME4411 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON)≦10mΩ@VGS=-10V.
RDS(ON)≦13mΩ@VGS=-4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

Datasheet Details

Part number	ME4411
Manufacturer	Matsuki
File Size	660.11 KB
Description	P-Channel MOSFET
Datasheet	ME4411 Datasheet
Additional preview pages of the ME4411 datasheet.

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Full PDF Text Transcription

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P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4411 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4411/ME4411-G FEATURES ● RDS(ON)≦10mΩ@VGS=-10V ● RDS(ON)≦13mΩ@VGS=-4.

Published: Jan 25, 2016 |