Datasheet Summary
P-Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4411 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8) Top View
ME4411/ME4411-G
Features
- RDS(ON)≦10mΩ@VGS=-10V
- RDS(ON)≦13mΩ@VGS=-4.5V
- Super high density cell design for...