ME4411-G
Overview
The ME4411 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
- RDS(ON)≦10mΩ@VGS=-10V
- RDS(ON)≦13mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
