Datasheet4U Logo Datasheet4U.com

ME4174-G - N-Channel 30V (D-S) MOSFET

Download the ME4174-G datasheet PDF. This datasheet also covers the ME4174 variant, as both devices belong to the same n-channel 30v (d-s) mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME4174 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦6.2mΩ@VGS=10V.
  • RDS(ON)≦11mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME4174-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME4174-G
Manufacturer Matsuki
File Size 0.98 MB
Description N-Channel 30V (D-S) MOSFET
Datasheet download datasheet ME4174-G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ME4101 NPN SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR Micro
ME4102 NPN SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR Micro
ME4103 NPN SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR Micro
ME4-H2 Hydrogen Gas Sensor Winsen
ME4-NH3 Ammonia Gas Sensor Winsen

Other Datasheets by Matsuki

Part Number Description
ME4174 N-Channel 30V (D-S) MOSFET
ME40P03T P-Channel MOSFET
ME40P03T-G P-Channel MOSFET
ME4410 N-Channel 30-V (D-S) MOSFET
ME4410A N-Channel 30-V (D-S) MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4174 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4174/ME4174-G FEATURES ● RDS(ON)≦6.2mΩ@VGS=10V ● RDS(ON)≦11mΩ@VGS=4.