Datasheet Details
| Part number | ME4936-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 708.18 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet | ME4936-G ME4936 Datasheet (PDF) |
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Overview: Dual N-Channel 30-V (D-S) MOSFET GENERAL.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | ME4936-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 708.18 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet | ME4936-G ME4936 Datasheet (PDF) |
|
|
|
The ME4936 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
| Part Number | Description |
|---|---|
| ME4936 | Dual N-Channel MOSFET |
| ME4938D | Dual N-Channel MOSFET |
| ME4938D-G | Dual N-Channel MOSFET |
| ME4920 | Dual N-Channel MOSFET |
| ME4920-G | Dual N-Channel MOSFET |
| ME4920D | Dual N-Channel MOSFET |
| ME4920D-G | Dual N-Channel MOSFET |
| ME4925 | Dual P-Channel MOSFET |
| ME4925-G | Dual P-Channel MOSFET |
| ME4942 | Dual N-Channel MOSFET |