ME4952-G, ME4952 Datasheet - Matsuki

ME4952-G Dual N-Channel MOSFET

The ME4952 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application suc.

ME4952-G Features

* RDS(ON)≦270mΩ@VGS=10V

* RDS(ON)≦295mΩ@VGS=6.0V

* RDS(ON)≦350mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Batte

ME4952-Matsuki.pdf

ME4952-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME4952-G, ME4952. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME4952-G, ME4952

Manufacturer:

Matsuki

File Size:

1.34 MB

Description:

Dual n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME4952-G, ME4952.
Please refer to the document for exact specifications by model.

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TAGS

ME4952-G ME4952 Dual N-Channel MOSFET Matsuki

ME4952-G Distributor