ME4956-G, ME4956 Datasheet - Matsuki

ME4956-G N- & P-Channel MOSFET

The ME4956 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application .

ME4956-G Features

* RDS(ON)≦116mΩ@VGS=10V (N-Ch)

* RDS(ON)≦133mΩ@VGS=4.5V (N-Ch)

* RDS(ON)≦215mΩ@VGS=-10V (P-Ch)

* RDS(ON)≦225mΩ@VGS=-4.5V (P-Ch)

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Ma

ME4956-Matsuki.pdf

ME4956-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME4956-G, ME4956. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME4956-G, ME4956

Manufacturer:

Matsuki

File Size:

1.41 MB

Description:

N- & p-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME4956-G, ME4956.
Please refer to the document for exact specifications by model.

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TAGS

ME4956-G ME4956 P-Channel MOSFET Matsuki

ME4956-G Distributor