ME4956-G mosfet equivalent, n- & p-channel mosfet.
* RDS(ON)≦116mΩ@VGS=10V (N-Ch)
* RDS(ON)≦133mΩ@VGS=4.5V (N-Ch)
* RDS(ON)≦215mΩ@VGS=-10V (P-Ch)
* RDS(ON)≦225mΩ@VGS=-4.5V (P-Ch)
* Super high density c.
* Power Management
* DC/DC Converter
* LCD TV & Monitor Display inverter
* C.
The ME4956 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar.
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