ME50N02-G mosfet equivalent, n-channel mosfet.
* RDS(ON)≦8mΩ@VGS=10V
* RDS(ON)≦9mΩ@VGS=4.5V
* RDS(ON)≦12mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resis.
* Power Management
* DC/DC Converter
Ordering Information: ME50N02 (Pb-free) ME50N02-G (Green product-Halogen f.
The ME50N02 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
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