ME50N06T Description
The ME50N06T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
ME50N06T Key Features
- RDS(ON)≦22mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current