Datasheet Details
| Part number | ME50N10AT |
|---|---|
| Manufacturer | Matsuki |
| File Size | 0.96 MB |
| Description | N-Channel MOSFET |
| Datasheet | ME50N10AT-Matsuki.pdf |
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Overview: ME50N10AT /ME50N10AT-G N- Channel 100V (D-S) MOSFET GENERAL.
| Part number | ME50N10AT |
|---|---|
| Manufacturer | Matsuki |
| File Size | 0.96 MB |
| Description | N-Channel MOSFET |
| Datasheet | ME50N10AT-Matsuki.pdf |
|
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|
The ME50N10AT-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
| Part Number | Description |
|---|---|
| ME50N10AT-G | N-Channel MOSFET |
| ME50N10 | N-Channel MOSFET |
| ME50N10-G | N-Channel MOSFET |
| ME50N10F | N-Channel MOSFET |
| ME50N10F-G | N-Channel MOSFET |
| ME50N10T | N-Channel MOSFET |
| ME50N10T-G | N-Channel MOSFET |
| ME50N02 | N-Channel MOSFET |
| ME50N02-G | N-Channel MOSFET |
| ME50N06A | N-Channel MOSFET |