ME50P06P-G, ME50P06P Datasheet - Matsuki

ME50P06P-G P-Channel MOSFET

The ME50P06P is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

ME50P06P-G Features

* RDS(ON)≦17mΩ@VGS=-10V

* RDS(ON)≦20mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverte

ME50P06P-Matsuki.pdf (0.98 MB)

ME50P06P-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME50P06P-G, ME50P06P. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME50P06P-G, ME50P06P

Manufacturer:

Matsuki

File Size:

0.98 MB

Description:

P-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME50P06P-G, ME50P06P.
Please refer to the document for exact specifications by model.

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ME50P06P-G ME50P06P P-Channel MOSFET Matsuki

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