ME5937ED-G, ME5937ED Datasheet - Matsuki

ME5937ED-G Dual P-Channel MOSFET

The ME5937ED is the Dual P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellul.

ME5937ED-G Features

* RDS(ON)≦62mΩ@VGS=-4.5V

* RDS(ON)≦77mΩ@VGS=-2.5V

* RDS(ON)≦110mΩ@VGS=-1.8V

* RDS(ON)≦180mΩ@VGS=-1.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

ME5937ED-Matsuki.pdf

ME5937ED-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME5937ED-G, ME5937ED. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME5937ED-G, ME5937ED

Manufacturer:

Matsuki

File Size:

920.03 KB

Description:

Dual p-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME5937ED-G, ME5937ED.
Please refer to the document for exact specifications by model.

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ME5937ED-G ME5937ED Dual P-Channel MOSFET Matsuki

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