ME60P06T-G mosfet equivalent, p-channel mosfet.
* RDS(ON)≦16.5mΩ@VGS=-10V
* RDS(ON)≦20.5mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC.
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
Ordering Informa.
The ME60P06T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
(TO-.
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