ME6972-G Datasheet, Matsuki

* RDS(ON)≦26mΩ@VGS=4.5V
* RDS(ON)≦36mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC curr.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC P.

The ME6972 Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particul.