ME6972-G, ME6972 Datasheet - Matsuki

ME6972-G Dual N-Channel MOSFET

The ME6972 Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as ce.

ME6972-G Features

* RDS(ON)≦26mΩ@VGS=4.5V

* RDS(ON)≦36mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* Load S

ME6972-Matsuki.pdf

ME6972-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME6972-G, ME6972. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME6972-G, ME6972

Manufacturer:

Matsuki

File Size:

1.27 MB

Description:

Dual n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME6972-G, ME6972.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

ME6972 Dual N-Channel MOSFET (Matsuki)

ME6970 Dual N-Channel MOSFET (Matsuki)

ME6970-G Dual N-Channel MOSFET (Matsuki)

ME6970D Dual N-Channel MOSFET (Matsuki)

ME6970D-G Dual N-Channel MOSFET (Matsuki)

ME6978ED Dual N-Channel MOSFET (Matsuki)

ME6978ED-G Dual N-Channel MOSFET (Matsuki)

ME6980ED Dual N-Channel MOSFET (Matsuki)

TAGS

ME6972-G ME6972 Dual N-Channel MOSFET Matsuki

ME6972-G Distributor