ME6982ED-G, ME6982ED Datasheet - Matsuki

ME6982ED-G Dual N-Channel MOSFET

The ME6982ED Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as .

ME6982ED-G Features

* RDS(ON)≦19mΩ@VGS=4.5V

* RDS(ON)≦24mΩ@VGS=2.5V

* RDS(ON)≦39mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery

ME6982ED-Matsuki.pdf

ME6982ED-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME6982ED-G, ME6982ED. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME6982ED-G, ME6982ED

Manufacturer:

Matsuki

File Size:

1.04 MB

Description:

Dual n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME6982ED-G, ME6982ED.
Please refer to the document for exact specifications by model.

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ME6982ED-G ME6982ED Dual N-Channel MOSFET Matsuki

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