ME6982ED Datasheet - Matsuki

Dual N-Channel MOSFET

ME6982ED Features

* RDS(ON)≦19mΩ@VGS=4.5V

* RDS(ON)≦24mΩ@VGS=2.5V

* RDS(ON)≦39mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery

ME6982ED General Description

The ME6982ED Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as .

ME6982ED Datasheet (1.04 MB)

ME6982ED Datasheet Preview — Preview of ME6982ED PDF

Datasheet Details

Part number:

ME6982ED

Manufacturer:

Matsuki

File Size:

1.04 MB

Description:

Dual n-channel mosfet.

📁 Related Datasheet

ME6982ED-G Dual N-Channel MOSFET (Matsuki)

ME6980ED Dual N-Channel MOSFET (Matsuki)

ME6980ED Dual N-Channel MOSFET (VBsemi)

ME6980ED-G Dual N-Channel MOSFET (Matsuki)

ME6986ED Dual N-Channel MOSFET (Matsuki)

ME6986ED-G Dual N-Channel MOSFET (Matsuki)

ME6987-G Dual P-Channel MOSFET (Matsuki)

ME6970 Dual N-Channel MOSFET (Matsuki)

ME6970-G Dual N-Channel MOSFET (Matsuki)

ME6970D Dual N-Channel MOSFET (Matsuki)

TAGS

ME6982ED Dual N-Channel MOSFET Matsuki

Image Gallery

ME6982ED Features

ME6982ED General Description

Datasheet Details

File Size:

Description:

ME6982ED Distributor