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ME7202-G Datasheet Dual N- & P-channel MOSFET

Manufacturer: Matsuki

Overview: Dual N- and P-Channel 12-V (D-S) MOSFET ME7202/ME7202-G GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ME7202 is the dual N-Channel + P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON) ≦ 31 mΩ@VGS=4.5V (N-Ch).
  • RDS(ON) ≦ 43 mΩ@VGS=2.5V(N-Ch).
  • RDS(ON) ≦ 74 mΩ@VGS=1.8V(N-Ch).
  • RDS(ON) ≦ 73mΩ@VGS=-4.5V(P-Ch).
  • RDS(ON) ≦ 120 mΩ@VGS=-2.5V(P-Ch).
  • RDS(ON) ≦ 240 mΩ@VGS=-1.8V(P-Ch).
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current.

ME7202-G Distributor