Datasheet Details
| Part number | ME7607 |
|---|---|
| Manufacturer | Matsuki |
| File Size | 0.96 MB |
| Description | P-Channel MOSFET |
| Datasheet | ME7607-Matsuki.pdf |
|
|
Overview: ME7607/ME7607-G P-Channel 35V Enhancement Mode MOSFET, ESD Protected.
| Part number | ME7607 |
|---|---|
| Manufacturer | Matsuki |
| File Size | 0.96 MB |
| Description | P-Channel MOSFET |
| Datasheet | ME7607-Matsuki.pdf |
|
|
|
The ME7607 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
| Part Number | Description |
|---|---|
| ME7607-G | P-Channel MOSFET |
| ME7609D | P-Channel MOSFET |
| ME7609D-G | P-Channel MOSFET |
| ME7636 | N-Channel MOSFET |
| ME7636-G | N-Channel MOSFET |
| ME7639 | P-Channel MOSFET |
| ME7639-G | P-Channel MOSFET |
| ME7640 | N-Channel MOSFET |
| ME7640-G | N-Channel MOSFET |
| ME7642 | N-Channel MOSFET |