ME7835S-G Datasheet, Matsuki

* RDS(ON) ≦18mΩ@VGS=-10V
* RDS(ON) ≦36mΩ@VGS=-4.5V APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Lo.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC e.

The ME7835S P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly.