ME7910D-G mosfet equivalent, dual n-channel mosfet.
* RDS(ON)≦14mΩ@VGS=4.5V
* RDS(ON)≦15mΩ@VGS=4V
* RDS(ON)≦17.5mΩ@VGS=3.1V
* RDS(ON)≦21mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS.
* Power Management in Note book
* Battery Powered System
* DC/DC Converter low side switching .
The ME7910D is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are .
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